InAsSe2 is a ternary semiconductor ceramic compound combining indium, arsenic, and selenium—a member of the III-V semiconductor family with chalcogenide character. This is primarily a research and development material investigated for its optical and electronic properties in specialized photonic and optoelectronic applications, rather than an established industrial commodity. Engineers consider InAsSe2 for narrow-bandgap photonic devices where tunable infrared response and thermal stability are valuable, though commercial adoption remains limited compared to binary III-V alternatives like InAs or InSe.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2006 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3559 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.02191 | eV/atom | — |