InAsO₃ is an indium arsenate ceramic compound belonging to the family of III-V oxide semiconductors and mixed-metal oxides. This is primarily a research and development material rather than an established commercial ceramic, studied for its potential electronic, photonic, or catalytic properties arising from the combination of indium and arsenic oxyanion chemistry. The material system is of interest in emerging applications where the unique electronic structure of indium-arsenic interactions with oxygen coordination might offer advantages in sensing, optoelectronics, or catalysis compared to conventional oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · PBE | ||
Magnetic Moment(μB) | -0.000200 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.042 | eV/atom | DFT | ||
| ↳ | 0.8200 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data