InAsO3

ceramic

· InAsO3

InAsO₃ is an indium arsenate ceramic compound belonging to the family of III-V oxide semiconductors and mixed-metal oxides. This is primarily a research and development material rather than an established commercial ceramic, studied for its potential electronic, photonic, or catalytic properties arising from the combination of indium and arsenic oxyanion chemistry. The material system is of interest in emerging applications where the unique electronic structure of indium-arsenic interactions with oxygen coordination might offer advantages in sensing, optoelectronics, or catalysis compared to conventional oxides.

experimental semiconductorsphotonic device researchcatalyst developmentchemical sensorshigh-temperature electronic applicationsmaterials research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.000200	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)2 entries	-1.042	eV/atom	—
↳	0.8200	eV/atom	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InAsO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental