InAsO2N

ceramic

· InAsO2N

InAsO₂N is an experimental ternary ceramic compound combining indium arsenide with oxygen and nitrogen components, belonging to the family of III-V oxynitride semiconductors. This material is primarily of research interest for advanced optoelectronic and high-temperature semiconductor applications, where the incorporation of nitrogen into indium arsenide lattices offers potential for bandgap engineering and enhanced thermal stability compared to binary InAs. While not yet widely deployed in production engineering, InAsO₂N represents an emerging materials platform for next-generation wide-bandgap semiconductor devices in harsh environments.

high-temperature semiconductorsoptoelectronic devicesbandgap engineering researchwide-bandgap electronicsIII-V compound semiconductorsexperimental advanced materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.0000403	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.9800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InAsO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental