InAsN3

ceramic

· InAsN3

InAsN3 is a quaternary III-V semiconductor compound combining indium, arsenic, and nitrogen in a crystalline ceramic structure. This material belongs to the family of dilute nitride semiconductors, which are primarily explored in research and development contexts for advanced optoelectronic and photonic applications. InAsN3 is investigated for potential use in infrared emitters, high-efficiency solar cells, and telecommunications devices where bandgap engineering through nitrogen incorporation offers advantages over conventional InAs compounds.

infrared optoelectronicsphotovoltaic researchtelecommunications wavelengthsdilute nitride semiconductorsbandgap engineeringexperimental compound

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.9477	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.560	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InAsN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental