InAsN3
ceramic· InAsN3
InAsN3 is a quaternary III-V semiconductor compound combining indium, arsenic, and nitrogen in a crystalline ceramic structure. This material belongs to the family of dilute nitride semiconductors, which are primarily explored in research and development contexts for advanced optoelectronic and photonic applications. InAsN3 is investigated for potential use in infrared emitters, high-efficiency solar cells, and telecommunications devices where bandgap engineering through nitrogen incorporation offers advantages over conventional InAs compounds.
infrared optoelectronicsphotovoltaic researchtelecommunications wavelengthsdilute nitride semiconductorsbandgap engineeringexperimental compound
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.