InAsI

InAsI is a compound semiconductor combining indium arsenide with iodine, belonging to the III-V semiconductor family. This material remains largely in the research phase, where it is being investigated for potential optoelectronic and high-speed electronic applications that leverage the favorable bandgap and carrier mobility properties of indium arsenide combined with iodine doping or alloying effects. Engineers would consider this material primarily in specialized photonics and quantum device research where conventional InAs may be enhanced by iodine incorporation to tune electronic or optical properties.