InAsH2O5 is an indium arsenate hydrate ceramic compound belonging to the family of metal arsenate oxides. This material is primarily encountered in research and materials science contexts rather than established commercial production, where it is investigated for potential applications in semiconductor-related ceramics and functional oxide systems. The compound's utility would depend on its thermal stability, electrical properties, and chemical resistance—characteristics that make arsenate ceramics relevant for high-temperature or corrosion-resistant applications where conventional oxides may be insufficient.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,011.9 | ksi | — | ||
Poisson's Ratio(ν) | 0.2300 | - | — | ||
Shear Modulus(G) | 5,553.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1624 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.349 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.316 | eV/atom | — |