InAsF6

ceramic

· JVASP-8540· InAsF6

InAsF6 is a ceramic compound combining indium arsenide with fluorine, belonging to the family of III-V semiconductor-related materials. This is primarily a research and specialized compound rather than a widely commercialized material, studied for potential applications in optoelectronics and high-frequency device technologies where the combination of indium and arsenic base materials offers unique electronic properties. Engineers considering this material should recognize it as a developmental compound whose practical engineering adoption depends on specific device performance requirements that justify the synthesis complexity and cost relative to more established alternatives.

optoelectronic devicessemiconductor researchhigh-frequency applicationsexperimental III-V compoundsspecialized RF componentsresearch prototyping

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	3,050.1	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3300	-	DFT · OptB88vdW
Shear Modulus(G)	1,377.9	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1497	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)	3.043	eV	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)	2.986	-	DFT · OptB88vdW
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00176	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000992	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-301.2	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	443.7	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	13.44	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.2589	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-2.133	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InAsF6 — Properties & Data | MatWorld

InAsF6

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental