InAs — Properties & Data | MatWorld

InAs

semiconductor

· InAs

Indium arsenide (InAs) is a III–V compound semiconductor with a direct bandgap, widely recognized for its narrow energy gap and high carrier mobility at room temperature. It is a cornerstone material in infrared optoelectronics, high-speed transistors, and quantum device research, chosen over silicon and gallium arsenide when sensitivity to infrared wavelengths or extreme operating speeds are critical requirements.

infrared photodetectorsmid-infrared lasershigh-electron-mobility transistors (HEMTs)quantum wells and superlatticesterahertz emitters and detectorsspace and thermal imaging sensors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

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Method

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)3 entries	49.16	GPa	DFT
↳	50.03	GPa	DFT · OptB88vdW
↳	49.16	GPa	DFT · PBE
Elastic Compliance Tensor(Sij)	Matrix (redacted)	1/GPa	DFT · PBE
Elastic Anisotropy(AU)	0.6748	-	DFT · PBE
Elastic Stiffness Tensor(Cij)	Matrix (redacted)	Pa	DFT · PBE
Poisson's Ratio(ν)2 entries	0.2900	-	DFT · OptB88vdW
↳	0.2816	-	DFT · PBE
Shear Modulus(G)3 entries	25.13	GPa	DFT
↳	26.00	GPa	DFT · OptB88vdW
↳	25.13	GPa	DFT · PBE

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Thermal Conductivity(k)	25.20	W/(m·K)	Measured

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Property	Value	Unit	Conditions	Source
Density(ρ)	5.367	kg/m³	DFT · OptB88vdW

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Method

Carrier

Property	Value	Unit	Conditions	Source
Band Gap(Eg)3 entries	0.4300	eV	Measured
↳	0.000	eV	DFT · OptB88vdW
↳	0.3980	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	20.04	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)	17.95	-	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.8362	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000280	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00271	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-42.48	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	221.7	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	9.900	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Method

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)2 entries	-0.2120	eV/atom	DFT · OptB88vdW
↳	-0.2990	eV/atom	Measured

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.