InAs
semiconductor· InAs
Indium arsenide (InAs) is a III–V compound semiconductor with a direct bandgap, widely recognized for its narrow energy gap and high carrier mobility at room temperature. It is a cornerstone material in infrared optoelectronics, high-speed transistors, and quantum device research, chosen over silicon and gallium arsenide when sensitivity to infrared wavelengths or extreme operating speeds are critical requirements.
infrared photodetectorsmid-infrared lasershigh-electron-mobility transistors (HEMTs)quantum wells and superlatticesterahertz emitters and detectorsspace and thermal imaging sensors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 49.16 | GPa | — | ||
| ↳ | 49.16 | GPa | — | ||
| ↳ | 50.03 | GPa | — | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | ||
Elastic Anisotropy(AU) | 0.6748 | - | — | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | ||
Poisson's Ratio(ν)2 entries | 0.2816 | - | — | ||
| ↳ | 0.2900 | - | — | ||
Shear Modulus(G)3 entries | 25.13 | GPa | — | ||
| ↳ | 25.13 | GPa | — | ||
| ↳ | 26.00 | GPa | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 25.20 | W/(m·K) | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.367 | kg/m³ | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.4300 | eV | — | ||
| ↳ | 0.1990 range 0.000–0.3980median of 2 measurements | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 20.04 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.8362 | C/m² | — | ||
Seebeck Coefficient(S) | -42.48 | µV/K | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.2990 | eV/atom | — | ||
| ↳ | -0.2120 | eV/atom | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.