Indium arsenide (InAs) is a III–V compound semiconductor with a direct bandgap, widely recognized for its narrow energy gap and high carrier mobility at room temperature. It is a cornerstone material in infrared optoelectronics, high-speed transistors, and quantum device research, chosen over silicon and gallium arsenide when sensitivity to infrared wavelengths or extreme operating speeds are critical requirements.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 49.16 | GPa | — | ||
| ↳ | 49.16 | GPa | — | ||
| ↳ | 50.03 | GPa | — | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | ||
Elastic Anisotropy(AU) | 0.6748 | - | — | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | ||
Poisson's Ratio(ν)2 entries | 0.2816 | - | — | ||
| ↳ | 0.2900 | - | — | ||
Shear Modulus(G)3 entries | 25.13 | GPa | — | ||
| ↳ | 25.13 | GPa | — | ||
| ↳ | 26.00 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 25.20 | W/(m·K) | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.367 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.4300 | eV | — | ||
| ↳ | 0.1990 range 0.000–0.3980median of 2 measurements | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 20.04 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.8362 | C/m² | — | ||
Seebeck Coefficient(S) | -42.48 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.2990 | eV/atom | — | ||
| ↳ | -0.2120 | eV/atom | — |