InAlO3

semiconductor
· InAlO3

InAlO3 is a ternary oxide semiconductor compound in the indium aluminum oxide family, typically studied as a wide-bandgap material for next-generation electronic and optoelectronic devices. It remains primarily a research-phase material, investigated for transparent conductive oxides (TCOs), high-electron-mobility transistors (HEMTs), and UV optoelectronics where its wide bandgap and potential for high carrier mobility offer advantages over single-component oxides like indium oxide or alumina alone. Engineers consider InAlO3 when designing transparent electronics for display substrates, solar cells, or high-frequency/high-temperature semiconductor applications that demand superior thermal stability and optical transparency compared to conventional III-V semiconductors.

transparent conductive electrodeswide-bandgap semiconductorsUV optoelectronic deviceshigh-electron-mobility transistorsdisplay substratesresearch-phase materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
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Verified Unverified Low confidence (<80%) Link to source
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N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.