InAlO2N

ceramic
· InAlO2N

InAlO₂N is an oxynitride ceramic compound combining indium, aluminum, oxygen, and nitrogen elements, representing an emerging material in the oxycarbide and oxynitride family that bridges traditional oxide ceramics with enhanced properties. This material is primarily of research interest for wide-bandgap semiconductor and high-temperature ceramic applications, where the incorporation of nitrogen into an indium-aluminum oxide matrix can provide improved thermal stability, mechanical strength, and potential electronic functionality compared to conventional oxide ceramics alone. InAlO₂N may be considered for next-generation applications in high-temperature structural components, semiconductor devices, or refractory uses where enhanced hardness and thermal properties are required, though industrial adoption remains limited and material characterization is ongoing.

high-temperature ceramicssemiconductor substrateswide-bandgap electronicsrefractory componentsresearch materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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Magnetic Moment(μB)
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Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
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eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.