InAlN3

metal

· InAlN3

InAlN3 is a ternary III-nitride semiconductor compound containing indium, aluminum, and nitrogen, belonging to the wide-bandgap nitride family used in high-performance electronic and optoelectronic devices. This material is primarily of research and emerging industrial interest for next-generation high-electron-mobility transistors (HEMTs), deep ultraviolet (UV) emitters, and power electronics where its wide bandgap and high breakdown field enable operation at elevated temperatures and voltages. InAlN offers potential advantages over binary GaN and AlN in lattice matching and strain engineering, making it attractive for advanced heterostructure designs in RF power amplifiers, UV photonics, and high-frequency switching applications.

high-frequency transistors (HEMTs)UV light emitterspower semiconductor devicesRF power amplifiersadvanced heterostructureshigh-temperature electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	2.389	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.560	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InAlN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control