InAgTe2 is a ternary semiconductor compound combining indium, silver, and tellurium in a chalcogenide crystal structure. This material belongs to the family of III-V and I-III-VI semiconductors, which are of significant interest for optoelectronic and thermoelectric applications. InAgTe2 remains primarily a research-phase compound, but materials in this compositional class are explored for infrared detection, photovoltaic energy conversion, and solid-state cooling due to their tunable bandgap and carrier transport properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 51.77 | GPa | — | ||
Poisson's Ratio(ν) | 0.3100 | - | — | ||
Shear Modulus(G) | 24.20 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 7.154 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.9300 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.07370 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1584 | eV/atom | — |