InAgSe2 is a ternary intermetallic compound combining indium, silver, and selenium, belonging to the chalcogenide alloy family. This material is primarily of research interest for optoelectronic and thermoelectric applications, where its layered crystal structure and semiconductor-like properties make it a candidate for infrared detectors, photovoltaic devices, and solid-state cooling systems. Engineers would consider InAgSe2 in advanced materials development where conventional single-element semiconductors are insufficient, though it remains largely in the experimental phase with limited commercial deployment compared to established III-V or II-VI semiconductor systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,047.4 | ksi | — | ||
Poisson's Ratio(ν) | 0.3800 | - | — | ||
Shear Modulus(G) | 1,933.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2004 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.08400 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 70.70 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.6167 | C/m² | — | ||
Seebeck Coefficient(S) | -35.68 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3815 | eV/atom | — |