InAgP is a ternary compound in the indium-silver-phosphorus system, belonging to the class of intermetallic or compound metal phases. This material represents an experimental or specialized composition rather than a commercial alloy, and is primarily of research interest for investigating phase diagrams, crystal structures, and potential applications in semiconductor or optoelectronic device research. The addition of silver to indium phosphide systems may offer opportunities for modified electronic properties or specialized contact materials, though industrial adoption remains limited compared to binary InP or established III-V semiconductor compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.07923 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.6160 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 1.424 | eV/atom | — | ||
Formation Energy(ΔHf) | 1.274 | eV/atom | — |