InAgO2N

ceramic

· InAgO2N

InAgO₂N is an experimental mixed-metal oxide-nitride ceramic compound combining indium, silver, oxygen, and nitrogen. This material belongs to the family of complex metal oxinitrides, which are of research interest for their potential to combine properties of oxides (thermal stability, ionic conductivity) with nitride characteristics (hardness, electronic properties). While not yet established in mainstream industrial production, materials in this chemical family are being investigated for advanced applications in solid-state ionics, thin-film electronics, and catalysis where tunable electronic and ionic transport properties are valuable.

solid-state electrolytes (research phase)thin-film semiconductorscatalytic coatingsadvanced ceramics R&Dfunctional oxide-nitrides

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	-0.06818	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.560	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

InAgO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental