InAcO3 is an indium-based ternary oxide semiconductor compound belonging to the perovskite or perovskite-like oxide family. This material is primarily explored in research contexts for transparent conductive oxide (TCO) applications and potentially for optoelectronic devices, where the combination of indium and oxygen provides electrical and optical properties relevant to next-generation electronics. Compared to established TCOs like ITO (indium tin oxide), InAcO3 represents an experimental alternative that may offer cost benefits or improved performance in specific device configurations, though maturity and reproducibility across synthesis routes remain active areas of investigation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.489 | eV | — | ||
Magnetic Moment(μB) | 0.000 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.553 | eV/atom | — |