In8 As8

semiconductor

· In8 As8

In₈As₈ is an intermetallic compound belonging to the III-V semiconductor family, combining indium and arsenic in an 1:1 stoichiometric ratio. This material is primarily of research interest for advanced optoelectronic and high-frequency electronic applications where the unique band structure and carrier properties of indium arsenide compounds are exploited.

infrared detectorshigh-speed transistorsquantum well structuresmillimeter-wave devicesphotovoltaic researchsolid-state physics research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.07210	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1230	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In8 As8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control