In6 N2 O6
semiconductor· In6 N2 O6
In₆N₂O₆ is an indium oxynitride compound belonging to the family of mixed-anion semiconductors that combine nitrogen and oxygen in the indium lattice. This material is primarily of research interest rather than established industrial production, with potential applications in optoelectronic devices where the bandgap can be tuned through composition control. Compared to conventional semiconductors like GaN or In₂O₃, oxynitride compounds offer the possibility of bandgap engineering and enhanced electronic properties, though they remain largely in the development phase for practical device implementation.
optoelectronic devices (experimental)wide-bandgap semiconductorsphotovoltaic researchthin-film electronicsbandgap engineeringnext-generation display materials
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.