In6 N2 O6

In₆N₂O₆ is an indium oxynitride compound belonging to the family of mixed-anion semiconductors that combine nitrogen and oxygen in the indium lattice. This material is primarily of research interest rather than established industrial production, with potential applications in optoelectronic devices where the bandgap can be tuned through composition control. Compared to conventional semiconductors like GaN or In₂O₃, oxynitride compounds offer the possibility of bandgap engineering and enhanced electronic properties, though they remain largely in the development phase for practical device implementation.