In₅Se₆ is a layered indium selenide compound belonging to the III-VI semiconductor family, characterized by a quasi-two-dimensional crystal structure similar to other indium chalcogenides. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its direct bandgap and tunable electronic properties make it attractive for next-generation solar cells, photodetectors, and light-emitting devices; it represents an underexplored alternative to more common indium-based semiconductors (InSe, In₂Se₃) and offers potential advantages in layer-dependent properties and integration into van der Waals heterostructures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1400 | eV | — |