In₅CuS₈ is a quaternary sulfide semiconductor compound belonging to the metal chalcogenide family, combining indium, copper, and sulfur in a structured crystalline lattice. This material is primarily of research interest for photovoltaic and optoelectronic applications, where its band gap and electronic properties position it as a potential absorber layer or window material in thin-film solar cells and photodetectors. Compared to more established semiconductors like CdTe or CIGS, In₅CuS₈ offers the advantage of using abundant, non-toxic elements while potentially delivering competitive optical and transport properties, though it remains largely in the development phase with limited commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.704 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.340 | eV | — | ||
| ↳ | 0.2930 range 0.000–0.5860median of 2 measurements | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -39.31 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6016 | eV/atom | — |