In₅CuS₈ is a quaternary sulfide semiconductor compound belonging to the metal chalcogenide family, combining indium, copper, and sulfur in a structured crystalline lattice. This material is primarily of research interest for photovoltaic and optoelectronic applications, where its band gap and electronic properties position it as a potential absorber layer or window material in thin-film solar cells and photodetectors. Compared to more established semiconductors like CdTe or CIGS, In₅CuS₈ offers the advantage of using abundant, non-toxic elements while potentially delivering competitive optical and transport properties, though it remains largely in the development phase with limited commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.704 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.5860 | eV | DFT · TBmBJ | ||
| ↳ | 1.340 | eV | Measured | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 6.525 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000204 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000101 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -39.31 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 46.06 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 18.84 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6016 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data