In₅AgTe₈ is a ternary semiconductor compound combining indium, silver, and tellurium, belonging to the chalcogenide semiconductor family. This material is primarily of research interest for thermoelectric applications and potentially for optoelectronic or photovoltaic devices, where the combination of heavy elements and mixed-valence chemistry can enable efficient heat-to-electricity conversion or tunable band gap behavior. Engineers evaluating this compound should note it represents an exploratory composition rather than a mature commercial material, making it relevant for next-generation energy harvesting systems where conventional semiconductors face performance or cost constraints.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,875.4 | ksi | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 2,026.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2036 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.4700 | eV | — | ||
| ↳ | 0.2080 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -107 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2804 | eV/atom | — |