In₅AgS₈ is a quaternary semiconductor compound combining indium, silver, and sulfur, belonging to the family of metal sulfide semiconductors with mixed-valence cation systems. This material is primarily of research and developmental interest for optoelectronic and photovoltaic applications, where its narrow bandgap and mixed-metal composition offer potential advantages in light absorption and charge transport compared to binary or ternary alternatives. The silver-indium-sulfide family has attracted attention for thin-film solar cells, infrared detectors, and other emerging semiconductor technologies where tunable electronic properties and cost-effective processing are priorities.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1713 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.760 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -38.15 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5844 | eV/atom | — |