In₅Cu₁S₈ is a quaternary semiconductor compound belonging to the sulfide family, combining indium, copper, and sulfur in a mixed-valence structure. This material is primarily of research interest for photovoltaic and optoelectronic applications, where its tunable bandgap and potential for earth-abundant alternatives to conventional semiconductors make it an emerging candidate. Compared to widely-used cadmium-based or lead-based semiconductors, copper-indium sulfides offer lower toxicity and access to more abundant elements, though In₅Cu₁S₈ remains largely in experimental development stages for practical device integration.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2056 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.6020 | eV/atom | — |