In5 Ag1 Te8
semiconductorIn₅Ag₁Te₈ is a ternary semiconductor compound combining indium, silver, and tellurium in a fixed stoichiometric ratio. This material belongs to the family of complex chalcogenides and is primarily of research interest for thermoelectric and optoelectronic applications, where the combination of elements offers potential for tuning bandgap, carrier mobility, and thermal properties. While not yet widely deployed in mainstream industrial production, materials in this compositional space are investigated for solid-state energy conversion, infrared optics, and next-generation photovoltaic devices where the layered or complex crystal structure may provide performance advantages over simpler binary or ternary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |