In₅Ag₁Se₈ is a quaternary semiconductor compound combining indium, silver, and selenium in a specific stoichiometric ratio. This material belongs to the family of chalcogenide semiconductors and is primarily of research interest for its potential in optoelectronic and thermoelectric applications. Engineers would consider this compound for specialized applications requiring layered semiconductor structures or narrow-bandgap properties, though it remains largely in the experimental phase compared to more established semiconductors like InSe or commercial III–VI compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,534.9 | ksi | — | ||
Shear Modulus(G) | 2,294.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.5700 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4790 | eV/atom | — |