In4SnS8

ceramic

· JVASP-53450· In4SnS8

In₄SnS₈ is a quaternary chalcogenide ceramic compound containing indium, tin, and sulfur, belonging to the family of semiconductor and photoelectric materials. This is a research-stage composition studied primarily for optoelectronic and photovoltaic applications where its bandgap and crystal structure offer potential advantages in light absorption and charge transport. The material family is notable for tunable electronic properties and potential use in next-generation solar cells and photodetectors, though engineering adoption remains limited compared to more mature semiconductor ceramics like CdTe or CIGS.

thin-film photovoltaicsphotodetectorsoptoelectronic devicesresearch semiconductorslight-harvesting materials

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	4.405	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions
Band Gap(Eg)	0.3030	eV	—
Magnetic Moment(μB)	0.000	µB	—
Seebeck Coefficient(S)	-48.20	µV/K	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.00580	eV/atom	—
Formation Energy(ΔHf)	-0.5588	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In4SnS8

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental