In4 Te8 Ba2

semiconductor

· In4 Te8 Ba2

In₄Te₈Ba₂ is a quaternary semiconductor compound combining indium, tellurium, and barium elements. This is a research-stage material explored primarily for thermoelectric and optoelectronic applications, belonging to the broader family of complex metal chalcogenides that can exhibit favorable band structures for energy conversion. The material's potential lies in its layered or mixed-valence structure, which may suppress thermal conductivity while maintaining electrical conductivity—a key advantage for thermoelectric device efficiency compared to simpler binary or ternary semiconductors.

thermoelectric energy conversionwaste heat recoveryexperimental semiconductorsoptoelectronic devicessolid-state coolingmaterials research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.9044	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.7850	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In4 Te8 Ba2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control