In₄Te₁₀ is a narrow-bandgap semiconductor compound belonging to the indium telluride family, typically studied as a layered or bulk material for thermoelectric and infrared applications. This material is primarily of research interest rather than widespread industrial use, with potential applications in thermoelectric energy conversion and mid-infrared optoelectronics where its thermal and optical properties could offer advantages over conventional semiconductors. Engineers evaluating In₄Te₁₀ should consider it within the context of emerging thermoelectric materials and infrared detector development, where material novelty and composition tunability are valued despite limited established production infrastructure.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02860 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2090 | eV/atom | — |