In4 Sn1 S8
semiconductorIn₄Sn₁S₈ is a quaternary chalcogenide semiconductor compound combining indium, tin, and sulfur in a fixed stoichiometric ratio. This material belongs to the family of ternary and quaternary sulfide semiconductors, which are of significant research interest for optoelectronic and photovoltaic applications due to their tunable band gaps and layered crystal structures. While primarily in the research phase rather than commercial production, In₄Sn₁S₈ represents the broader class of mixed-metal chalcogenides being investigated as potential alternatives to conventional semiconductors for next-generation thin-film devices, offering the possibility of lower-cost or more abundant element substitution compared to traditional III-V or II-VI semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |