In4 Sn1 S8

semiconductor

· In4 Sn1 S8

In₄Sn₁S₈ is a quaternary chalcogenide semiconductor compound combining indium, tin, and sulfur in a fixed stoichiometric ratio. This material belongs to the family of ternary and quaternary sulfide semiconductors, which are of significant research interest for optoelectronic and photovoltaic applications due to their tunable band gaps and layered crystal structures. While primarily in the research phase rather than commercial production, In₄Sn₁S₈ represents the broader class of mixed-metal chalcogenides being investigated as potential alternatives to conventional semiconductors for next-generation thin-film devices, offering the possibility of lower-cost or more abundant element substitution compared to traditional III-V or II-VI semiconductors.

experimental photovoltaic materialsthin-film semiconductor researchoptoelectronic device developmentchalcogenide compound studiesband-gap engineering applicationsalternative semiconductor exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.4575	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5590	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In4 Sn1 S8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control