In₄S₆ is an indium sulfide compound semiconductor belonging to the III-VI family of materials, characterized by a layered crystal structure and mixed-valence indium chemistry. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its tunable bandgap and potential for thin-film device fabrication make it attractive as an alternative to more established semiconductors like CdS or InP; however, it remains largely experimental with limited commercial deployment compared to conventional III-V or II-VI systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.001 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5790 | eV/atom | — |