In₄S₄ is an indium sulfide semiconductor compound belonging to the III-VI semiconductor family, characterized by a mixed-valence indium structure. This material is primarily investigated in research contexts for optoelectronic and photovoltaic applications, where its band gap and electronic properties show promise for thin-film solar cells, infrared detectors, and light-emitting devices. Relative to conventional alternatives like CdTe or CIGS solar absorbers, In₄S₄ offers potential advantages in terms of earth abundance and reduced toxicity concerns, though it remains less mature for industrial-scale production than established semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,532.3 | ksi | — | ||
Shear Modulus(G) | 3,435.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9470 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5840 | eV/atom | — |