In₄Ni₂S₈ is a ternary semiconductor compound combining indium, nickel, and sulfur, belonging to the class of mixed-metal chalcogenides. This material is primarily of research interest for its potential in optoelectronic and thermoelectric applications, where the combination of constituent elements offers tunable band structure and carrier transport properties distinct from binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00640 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4940 | eV/atom | — |