In4 Mn2 O8

semiconductor

· In4 Mn2 O8

In₄Mn₂O₈ is an indium-manganese oxide semiconductor compound belonging to the spinel or related mixed-metal oxide family. This material is primarily investigated in research contexts for its semiconducting and potential catalytic or electrochemical properties, with composition and crystalline structure that position it as a candidate for emerging applications in oxide electronics and energy conversion.

experimental semiconductor devicesoxide electronics researchcatalytic applicationselectrochemical sensorsthin-film transistorsmaterials science research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01320	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.622	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In4 Mn2 O8

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control