In₄Bi₄O₁₂ is an indium bismuth oxide compound belonging to the family of mixed-metal oxides with semiconductor properties. This material is primarily of research interest for photocatalytic and optoelectronic applications, where its layered crystal structure and bandgap characteristics make it relevant for light absorption and charge carrier transport. Industrial adoption remains limited, but the indium-bismuth oxide family is being explored as an alternative to more toxic or expensive semiconductors in emerging technologies such as photocatalysis, gas sensing, and possibly next-generation solar or visible-light-responsive devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 141.2 | GPa | — | ||
Shear Modulus(G) | 55.80 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.846 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.530 | eV/atom | — |