Indium selenide (In₃Se) is a III–VI semiconductor ceramic compound combining indium and selenium. It belongs to the family of layered chalcogenide materials and is primarily of research and developmental interest rather than a mature commercial material. In₃Se and related indium selenides are investigated for optoelectronic and photovoltaic applications where their direct bandgap and layered crystal structure offer potential for thin-film devices, photodetectors, and next-generation solar cells; however, these materials remain largely in the experimental phase with limited industrial deployment compared to established semiconductors like silicon or gallium arsenide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2306 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.08640 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.1694 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data