Indium selenide (In₃Se) is a III–VI semiconductor ceramic compound combining indium and selenium. It belongs to the family of layered chalcogenide materials and is primarily of research and developmental interest rather than a mature commercial material. In₃Se and related indium selenides are investigated for optoelectronic and photovoltaic applications where their direct bandgap and layered crystal structure offer potential for thin-film devices, photodetectors, and next-generation solar cells; however, these materials remain largely in the experimental phase with limited industrial deployment compared to established semiconductors like silicon or gallium arsenide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2306 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.08640 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1694 | eV/atom | — |