In₃SbTe₄ is a ternary chalcogenide ceramic compound composed of indium, antimony, and tellurium, belonging to the family of narrow-bandgap semiconductors and phase-change materials. This material is primarily investigated in research settings for thermoelectric applications and phase-change memory devices, where its ability to rapidly switch between crystalline and amorphous states makes it valuable for thermal management and data storage; it offers potential advantages in energy conversion efficiency and thermal stability compared to traditional binary telluride systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.516 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1233 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1389 | eV/atom | — |