In₃SbTe₂ is a ternary chalcogenide compound belonging to the narrow-bandgap semiconductor family, synthesized from indium, antimony, and tellurium elements. This material is primarily investigated in thermoelectric and infrared optics research, where its narrow bandgap and high carrier mobility make it relevant for mid-to-far infrared detection and thermal energy conversion applications. As an emerging compound material, In₃SbTe₂ represents the class of narrow-bandgap semiconductors being explored as alternatives to traditional materials like indium antimonide in cost-sensitive or high-performance thermal sensing and power generation systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.591 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01080 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2299 | eV/atom | — |