Indium antimonide (In₃Sb) is a narrow-bandgap III-V semiconductor ceramic compound used primarily in infrared detection and optoelectronic applications. This material is valued for its sensitivity in the infrared spectrum and high carrier mobility, making it suitable for thermal imaging sensors, night vision systems, and photovoltaic devices operating in specialized wavelength ranges where alternative semiconductors are less effective.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2457 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | 25.74 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.06770 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.01819 | eV/atom | — |