Indium sulfide (In₃S) is a III-VI semiconductor ceramic compound belonging to the indium chalcogenide family. This material is primarily of research and developmental interest rather than established in high-volume production, with potential applications leveraging its semiconducting properties in optoelectronic and photovoltaic devices. Engineers consider In₃S for niche applications where its electronic band structure and optical characteristics offer advantages in emerging technologies such as thin-film solar cells, infrared detectors, or transparent conducting layers.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,405.6 | ksi | — | ||
Poisson's Ratio(ν) | 0.4400 | - | — | ||
Shear Modulus(G) | 884.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2167 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1660 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1287 | eV/atom | — |