In₃Ge is an intermetallic ceramic compound combining indium and germanium, belonging to the family of III-V semiconductor and intermetallic materials. This is a research-phase compound primarily of interest in semiconductor physics and materials science rather than established industrial production. The material's potential applications lie in advanced optoelectronics, thermoelectric devices, and high-frequency electronics where the combination of indium and germanium lattice properties could offer improved performance; however, it remains largely experimental with limited commercial deployment compared to conventional III-V semiconductors like GaAs or InP.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.787 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1175 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.1135 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data