In3Ge

ceramic

· JVASP-100986· In3Ge

In₃Ge is an intermetallic ceramic compound combining indium and germanium, belonging to the family of III-V semiconductor and intermetallic materials. This is a research-phase compound primarily of interest in semiconductor physics and materials science rather than established industrial production. The material's potential applications lie in advanced optoelectronics, thermoelectric devices, and high-frequency electronics where the combination of indium and germanium lattice properties could offer improved performance; however, it remains largely experimental with limited commercial deployment compared to conventional III-V semiconductors like GaAs or InP.

experimental semiconductorsthermoelectric devicesoptoelectronics researchhigh-frequency electronicscompound semiconductor developmentmaterials research

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	6.787	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—
Seebeck Coefficient(S)	-5.080	µV/K	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.1175	eV/atom	—
Formation Energy(ΔHf)	0.1135	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In3Ge

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental