In3GaN4

ceramic

· JVASP-102339· In3GaN4

In₃GaN₄ is an indium gallium nitride ceramic compound belonging to the ternary nitride family, designed for advanced semiconductor and optoelectronic applications. This material is primarily of research interest for high-temperature power electronics, wide-bandgap semiconductor devices, and potentially photonic applications where the combination of indium and gallium nitrides offers tunable electronic properties. Compared to binary GaN or InN, ternary compositions like In₃GaN₄ enable optimization of bandgap energy and lattice parameters for specific device requirements, though commercial adoption remains limited relative to established GaN-based materials.

High-temperature power semiconductorsWide-bandgap optoelectronicsResearch-phase nitride devicesHigh-frequency RF componentsPhotonic integrated circuitsNext-generation power electronics

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2364	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.06160	eV/atom	—
Formation Energy(ΔHf)	-0.08897	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In3GaN4

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental