In₃GaN₄ is an indium gallium nitride ceramic compound belonging to the ternary nitride family, designed for advanced semiconductor and optoelectronic applications. This material is primarily of research interest for high-temperature power electronics, wide-bandgap semiconductor devices, and potentially photonic applications where the combination of indium and gallium nitrides offers tunable electronic properties. Compared to binary GaN or InN, ternary compositions like In₃GaN₄ enable optimization of bandgap energy and lattice parameters for specific device requirements, though commercial adoption remains limited relative to established GaN-based materials.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.543 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00800 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 8.867 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.06160 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.08897 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data