In3Ga
ceramicIn₃Ga is a III-V compound semiconductor ceramic composed of indium and gallium, belonging to the family of binary intermetallic semiconductors used in optoelectronic and high-frequency device applications. This material is primarily employed in research and specialized photonic devices, particularly for infrared detectors, light-emitting devices, and high-speed transistors where the bandgap and electron mobility characteristics of the In-Ga system offer advantages over single-element semiconductors. In₃Ga is notable as a tunable alternative within the III-V platform, allowing engineers to engineer material properties between pure indium and gallium compounds for wavelength-specific or performance-optimized applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |