In3Ga

ceramic

· JVASP-100604· In3Ga

In₃Ga is a III-V compound semiconductor ceramic composed of indium and gallium, belonging to the family of binary intermetallic semiconductors used in optoelectronic and high-frequency device applications. This material is primarily employed in research and specialized photonic devices, particularly for infrared detectors, light-emitting devices, and high-speed transistors where the bandgap and electron mobility characteristics of the In-Ga system offer advantages over single-element semiconductors. In₃Ga is notable as a tunable alternative within the III-V platform, allowing engineers to engineer material properties between pure indium and gallium compounds for wavelength-specific or performance-optimized applications.

infrared optoelectronicshigh-frequency transistorsphotonic integrated circuitsresearch compound semiconductorstunable bandgap devices

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2427	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—
Seebeck Coefficient(S)	-3.810	µV/K	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.03450	eV/atom	—
Formation Energy(ΔHf)	0.03054	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

In3Ga

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental