In₃AsSe₃ is an indium-based ternary ceramic compound belonging to the III-V semiconductor family, combining indium with arsenic and selenium. This material is primarily of research and development interest for optoelectronic and infrared applications, where its wide bandgap and photonic properties make it a candidate for specialized devices requiring mid-infrared sensitivity or high-frequency operation in niche experimental systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1871 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01600 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 19.03 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.7103 | C/m² | — | ||
Seebeck Coefficient(S) | -32.85 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02500 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4106 | eV/atom | — |